The Source/drain Engineering Of Nanoscale Germanium-based Mos Devices
- Collana:
- Springer Theses
- EAN:
9783662570265
- ISBN:
3662570262
- Pagine:
- 59
- Formato:
- Paperback
- Lingua:
- Tedesco
Descrizione The Source/drain Engineering Of Nanoscale Germanium-based Mos Devices
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Inserisci la tua e-mail per essere informato appena il libro sarà disponibile