Silicon Molecular Beam Epitaxy

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents Volume I. SiGe Superlattices. SiGe strained layer superlattices G. Abstreiter. Optical properties of strained GeSi superlattices grown on 001Ge T.P. Pearsall et al.. Growth and characterization of SiGe atomic layer superlattices J.-M. Baribeau et al.. Optical properties of perfect