Electrostatic doping in novel materials

In this book we present the investigation ofelectrostatic doping in a wide variety of novelmaterials incorporated in field-effect transistors(FETs), including polymers, organicmolecular crystals, graphene and bilayer graphene.These studies have lead to substantialadvances in our current understanding of thesematerials. Specifically, we performed the firstinfrared (IR) imaging of the accumulation layer inpoly(3-hexylthiophene) (P3HT)FETs. Furthermore, we found that charge carriers inmolecular orbital bands with lightmass dominate the transport properties of singlecrystal rubrene. More recently, weexplored the IR absorption of graphene and foundseveral signatures of many-bodyinteractions. Moreover, we discovered an asymmetricband structure in bilayer grapheneand determined the band parameters with an accuracynever achieved before. Our workhas demonstrated that IR spectroscopy is uniquelysuited for probing the electronicexcitations in nanometer-thick accumulation layers inFET devices.